SI2302DS,215

Manufacturer
NXP USA Inc.

Manufacturer Product Number
SI2302DS,215

Description
MOSFET N-CH 20V 2.5A TO236AB

Detailed Description
N-Channel 20 V 2.5A (Tc) 830mW (Tc) Surface Mount SOT-23 (TO-236AB)


TYPE
DESCRIPTION

Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
650mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23 (TO-236AB)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2